LX5516 microsemi analog mixed signal group 11861 western avenue, garden grove, ca. 92841, 714- 898-8121, fax: 714-893-2570 page 1 p roduction d at a s heet w ww . microsemi . co m ingap hbt 2.4 - 2.5 ghz power amplifier module tm ? copyright ? 2008 rev 1.0, 2008-12-16 d e s c r i p t i o n d e s c r i p t i o n d e s c r i p t i o n d e s c r i p t i o n the LX5516 is a power amplifier module optimized for wlan applications in the 2.4-2.5ghz frequency range. the pam is implemented as a two-stage monolithic microwave integrated circuit (mmic) with on-chip active bias and 50 impedance matched at both input and output. the device is manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) ic process (mocvd). with single low voltage supply of 3.3v, it delivers 29db power gain between 2.4-2.5ghz, at a low quiescent current of 80ma. for 18dbm ofdm output power (64qam, 54mbps), the pam provides a low evm (error-vector magnitude) of 2.5%, and consumes 130ma total dc current. the LX5516 is available in a 12-pin 2x2mm micro-lead package (mlpq- 12l). the compact footprint, ultra low profile, and thermal capability of the mlp package make the LX5516 an ideal solution for high-gain power amplifier requirements for ieee 802.11b/g/n applications. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com b l o c k d i a g r a m b l o c k d i a g r a m b l o c k d i a g r a m b l o c k d i a g r a m k e y f e a t u r e s k e y f e a t u r e s k e y f e a t u r e s k e y f e a t u r e s advanced ingap hbt 2.4-2.5ghz operation single-polarity 3.3v supply quiescent current ~80ma power gain ~ 29 db pout=~+18dbm for 2.5% evm, ofdm 64qam/54mbps total current ~130ma for pout= +18dbm 50 input/output matching on-chip output power detector small footprint: 2x2mm 2 ultra low profile:0.46mm a p p l i c a t i o n s a p p l i c a t i o n s a p p l i c a t i o n s a p p l i c a t i o n s ieee 802.11b/g/n 2 x 2 2 x 2 2 x 2 2 x 2 m m m l p p a c k a g e m m m l p p a c k a g e m m m l p p a c k a g e m m m l p p a c k a g e p a c k a g e o r d e r i n f o p a c k a g e o r d e r i n f o p a c k a g e o r d e r i n f o p a c k a g e o r d e r i n f o ll plastic mlpq 12 pin 2x2mm LX5516ll note: available in tape & reel. append the letter s ?tr? to the part number. (i.e. LX5516ll-tr) rf output vref rf input rf output vc det active bias network vcc input match output match rf rf output vref rf input rf output vc det active bias network active bias network vcc input match output match rf l l x x 5 5 5 5 1 1 6 6
LX5516 microsemi analog mixed signal group 11861 western avenue, garden grove, ca. 92841, 714- 898-8121, fax: 714-893-2570 page 2 p roduction d at a s heet w ww . microsemi . co m ingap hbt 2.4 - 2.5 ghz power amplifier module tm ? copyright ? 2008 rev 1.0, 2008-12-16 a b s o l u t e m a x i m u m r a t a b s o l u t e m a x i m u m r a t a b s o l u t e m a x i m u m r a t a b s o l u t e m a x i m u m r a t i n g s i n g s i n g s i n g s dc supply voltage, rf off ........................... ................................................... 5v collector current................................... ................................................... 500ma total power dissipation ............................. ................................................... .2w rf input power (with 50 ohm load at output) ........ .............................. +10 dbm maximum operating junction temperature (tj)???????????? ?. . 150c operation ambient temperature ...................... ............................... -40 to +85c storage temperature................................ .....................................-60 to +150c package peak temp. for solder reflow (40 seconds maximum exposure)260c (+0 -5) note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, n egative out of specified terminal . t h e r m a l d a t a t h e r m a l d a t a t h e r m a l d a t a t h e r m a l d a t a ll plastic mlpq 12-pin thermal resistance - junction to c ase , ? jc 7.9 c/w thermal resistance - junction to a mbient , ? ja 76.5 c/w junction temperature calculation: t j = t a + (p d x ja ). the ja numbers are guidelines for the thermal performance o f the device/pc- board system. all of the above assume no ambient airfl ow. p a c k a g e p i n o u t p a c k a g e p i n o u t p a c k a g e p i n o u t p a c k a g e p i n o u t det vb vcc ll p ackage (bottom view) rohs / pb-free 100% nipdau lead finish f u n c t i o n a l p i n d e s c r f u n c t i o n a l p i n d e s c r f u n c t i o n a l p i n d e s c r f u n c t i o n a l p i n d e s c r i p t i o n i p t i o n i p t i o n i p t i o n name description rf in (2) rf input for the power amplifier. vcc (4) supply voltage for the bias reference and cont rol circuits. vb (5) bias control voltage for the first and second stag e. det(6) output power detector. rf out(8) rf output and power supply for the second stage amplifi er. vc1(11) dc supply voltage for the first stage amplifie r. gnd the center metal base of the mlp package provides both d c/rf ground as well as heat sink for the power amplifier. (1,3,7,9,10, 12) pins to be grounded to the center metal on the pcb. rf input rf output vc1 p p a a c c k k a a g g e e d d a a t t a a
microsemi analog mixed signal group 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 tm ? www. microsemi . com copyright information thank you for your interest in microsemi ? analog mixed signal products. the full data sheet for this device contains proprietary information. to obtain a copy, please contact your loca l microsemi sales representative. the name of your local representative ca n be obtained at the following link http://www.microsemi.com/contact/contactfind.asp or contact us directly by sending an email to: ipgdatasheets@microsemi.com be sure to specify the data sheet you are requesting and include your company name and contact inform ation and or vcard. we look forward to hearing from you.
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